Author Affiliations
Abstract
Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin 300350, China
Chalcopyrite Cu(In,Ga)Se2 (CIGS) thin films deposited in a low-temperature process (450°C) usually produce fine grains and poor crystallinity. Herein, different Ag treatment processes, which can decrease the melting temperature and enlarge band gap of the CIGS films, were employed to enhance the quality of thin films in a low-temperature deposition process. It is demonstrated that both the Ag precursor and Ag surface treatment process can heighten the crystallinity of CIGS films and the device efficiency. The former is more obvious than the latter. Furthermore, the Urbach energy is also reduced with Ag doping. This work aims to provide a feasible Ag-doping process for the high-quality CIGS films in a low-temperature process.
CuSe2 thin film low-temperature deposition process Ag doping crystallinity Urbach energy 
Chinese Optics Letters
2021, 19(11): 114001
周健 1,2孙芸 1,2阮昊 3
作者单位
摘要
1 中国科学院上海微系统与信息技术研究所, 上海200050
2 中国科学院太赫兹固态技术重点实验室, 上海200050
3 中国科学院上海光学精密机械研究所, 上海201800
激光雷达可精确采集目标的距离和速度信息, 并可实现目标探测与成像, 因此在智能交通、无人机避障、智慧家庭、卫星测绘与导航等领域具有重要的应用前景。首先介绍了激光探测的基本原理、主流技术方案以及研究必要性;其次, 针对激光雷达固态化和小型化集成的应用需求, 介绍了国际上光学相控阵激光雷达、机械扫描激光雷达和闪光激光雷达的技术发展动态, 并阐述了我国激光雷达技术、产品和商业发展现状;最后提出了激光雷达技术面临的挑战以及可能的解决方案, 并对其发展趋势进行了展望。
激光雷达 光学相控阵 探测器 lidar optical phased array detector 
红外
2020, 41(5): 1
作者单位
摘要
中国科学院上海微系统与信息技术研究所,上海 200050
常规多普勒信号识别主要以多普勒信号幅值作为判定依据。该方法在扇面波束探测器的目标识别过程中,由于多普勒时域波形变窄,存在识别率低的问题。基于测试的多普勒信号数据,进行了时频变换分析。在不改变现有波束形状的条件下,提出了一种采用频率和幅度联合判定的信号识别方法。实验结果表明,当6次目标进入探测范围时,探测器都能准确识别目标,为无人机目标识别提供了借鉴价值。
多普勒 毫米波 识别 Doppler millimeter wave recognition 
红外
2019, 40(12): 22
作者单位
摘要
1 中国科学院上海微系统与信息技术研究所,上海 200050
2 东华大学理学院,上海 201620
常规侧向探测天线主波束垂直于天线辐射面,会导致飞行探测漏报率高,因此有必要研究具有前倾探测功能的天线,以提高探测准确率。基于HFSS软件,设计了狭缝天线结构。设计的输入参数如下:频段为36.85~37.15 GHz,收发隔离度优于50 dB,前倾角为20°~24°,旁瓣抑制度要求大于-10 dB,天线长度小于85 mm,方位角大于80°,俯仰角小于11°,增益大于11 dB。测试结果表明,天线增益为12 dB,在36.85~37.15 GHz条件下,方位角位于116°~134°之间,俯仰角位于8°~9°之间,前倾角在22°~24°之间,旁瓣抑制度位于-11.45~-14.60 dB之间,且波束方向可控。在36.5~37.5 GHz频率范围内,驻波比保持在1.413以下,收发隔离度保持在-51.132以下,天线总长度为83 mm。该天线的测试结果与设计一致,能满足设计要求,为无人机侧向探测器提供天线技术支撑。
缝隙天线 前倾探测 毫米波 小型化 slot antenna forward tilt detection millimeter wave miniaturization 
红外
2019, 40(10): 20
Author Affiliations
Abstract
1 Tianjin Key Laboratory of Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology and Nankai University, Tianjin 300350, China
2 Hanergy Heyuan Mobile Energy Intelligence Manufacture Base, Beijing 100031, China
An eco-friendly Zn(O,S) film with a wider band gap is emerging as one of the promising Cd-free replacement material, which can be deposited by radio frequency sputtering. The effect of sputtering pressure on the Zn(O,S) films properties and the devices performance are studied systematically. At high pressure, the ZnS phase is found in the Zn(O,S) films resulting in a higher barrier at Zn(O,S) /CIGS interface which would lead to a low recombination activation energy (Ea). By reducing sputtering pressure, single phase of Zn(O,S) films are conducive to carrier transport as well as promote the films electric properties, ultimately improving the performance of Zn(O,S)/CIGS solar cells.
光电子快报(英文版)
2019, 15(6): 435
Author Affiliations
Abstract
1 Tianjin Key Laboratory of Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China
2 Key Laboratory for Green Chemical Technology of Ministry of Education, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China
3 Davidson School of Chemical Engineering, Purdue University, West Lafayette IN47907, USA
With reducing the absorber layer thickness and processing temperature, the recombination at the back interface is se-vere, which both can result in the decrease of open-circuit voltage and fill factor. In this paper, we prepare Al2O3 by atomic layer deposition (ALD), and investigate the effect of its thickness on the performance of Cu(In,Ga)Se2 (CIGS) solar cell. The device recombination activation energy (EA) is increased from 1.04 eV to 1.11 eV when the thickness of Al2O3 is varied from 0 nm to 1 nm, and the height of back barrier is decreased from 48.54 meV to 38.05 meV. An effi-ciency of 11.57 % is achieved with 0.88-μm-thick CIGS absorber layer.
光电子快报(英文版)
2018, 14(5): 363
Author Affiliations
Abstract
1 Key Laboratory of Terahertz Technology, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China
2 University of Chinese Academy of Sciences, Beijing 100049, China
A practical millimeter-wave (MMW) holographic imaging system with good robustness is developed for the detection of concealed weapons at security checkpoints, especially at the airport. The system is used to scan the passenger and detect any weapons hidden in their clothes. To reconstruct the three dimensional image, a holographic MMW imaging algorithm based on aperture synthesis and backscattering is presented. The system is active and works at 28–33 GHz. As a practical imaging system, the robustness is analyzed in detail in terms of the peak signal-to-noise ratio.
110.3010 Image reconstruction techniques 110.6880 Three-dimensional image acquisition 
Chinese Optics Letters
2016, 14(10): 101101
作者单位
摘要
1 天津城建大学理学院 应用物理系,天津 300084
2 南开大学电子信息与光学工程学院 光电子薄膜与器件研究所,天津 300071
考察了通过自主研发的高温热裂解辅助硒化装置所产生的高活性硒对CIGS薄膜结构和器件性能的影响。通过调节高温裂解系统的温度可以有效调节不同的硒活性。研究发现,第一台阶HC-Se气氛可以提高CIGS薄膜表面的Ga含量,使得CIGS薄膜内的Ga分布更加平缓,进而提高CIGS薄膜表面禁带宽度。而且HC-Se气氛可以消除CIGS“两相分离”现象。两种因素的共同作用使得CIGS薄膜太阳电池的开路电压提高了34.6%。电池转换效率从6.02%提升至8.76%,增长了45.5%。
热裂解活化硒 开路电压 CIGS CIGS thermal-cracking selenium open-circuit voltage 
发光学报
2015, 36(11): 1289
李光旻 1,2刘玮 1,*林舒平 1李晓东 1[ ... ]孙云 1
作者单位
摘要
1 南开大学电子信息与光学工程学院 光电子薄膜与器件研究所, 天津 300071
2 天津城建大学理学院 应用物理系, 天津 300084
研究了金属预制层制备过程中溅射气压对Cu(In1-xGax)Se2(CIGS)薄膜及电池器件性能的影响。通过调节溅射气压改变预制层的结晶状态及疏松度与粗糙度, 在合适的预制层结构下, 活性硒化热处理过程中, 可使Ga有效地掺入到薄膜中形成优质的CIGS固溶体。高溅射气压会使预制层过于致密, 呈现非晶态趋势。经活性硒化热处理后, CIGS薄膜容易产生CIS与CGS“两相分离”现象, 从而导致CIGS薄膜太阳电池的开路电压和填充因子降低, 电池转换效率由10.03%降低到5.02%。
溅射气压 粗糙度 CIGS固溶体 sputtering pressure roughness CIGS solid solution 
发光学报
2015, 36(2): 192
作者单位
摘要
海军航空工程学院信息融合技术研究所,山东 烟台264001
为了解决低信噪比条件下的机动目标检测跟踪问题,研究了辅助粒子滤波与多模粒子滤波(MMPF)相结合的检测前跟踪(APFMMPF)算法。将多模粒子滤波过程中包含目标存在变量及运动模式变量的预测粒子直接用于产生辅助变量,进行辅助粒子滤波过程实现对机动目标的检测跟踪。通过APFMMPF算法与单纯MMPF算法的仿真结果对比可见,APFMMPF算法的检测概率高、跟踪误差小,检测跟踪性能优于MMPF算法。由算法机理和仿真结果可见,由于APFMMPF算法中粒子采样利用了当前量测信息,可有效提高对机动目标的检测跟踪性能。
弱目标 目标检测 目标跟踪 辅助粒子滤波 检测前跟踪 stealthy target target detecting target tracking auxiliary particle filtering Track Before Detect (TBD) 
电光与控制
2013, 20(7): 28

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